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S.NO
Facility
Specifications
1
Dicing
» Capability for dicing wafers up to 6 diameter and 25 mil thick.
» Capability to dice Silicon, GaAs, Ceramic substrates etc.
» Capable of dicing a minimum sheet width of 75-100 microns


2
Die bonding
» Both Epoxy and Eutectic die bonding under inert atmosphere
3
Cleaning
» Cleaning with Isopropyl alcohol, acetone after die bonding.
» Ultrasonic cleaning for the substrates and carriers
4
Wire Bonding
» Both Wedge and Ball bonding facility
5
Bond pull and die shear test facility
» Die-Shear test for chip as well as substrate up to 5Kg force
» Bond pull test for both Gold wire and ribbon
6
Parallel gap welder
» bonding gold ribbon up to 20 mil wide and 20 mil thick
7
Resistive welding
» Capable of welding Kovar and Stainless steel packages.
» Welding up to 8” x 8 “ size.
» Hermeticity of the order of 1 x 10 –8 atm cc/sec
8
Pressurization system
» Capable of pressurizing with fluro-carbons or helium.
9
Gross leak detector
» Bubble detection up to 10 –5 atm cc /sec
10
Fine leak detector
» Capability to detect leakage’s up to 1 x 10 –8  atm cc/sec
11
Soldering
» ESD grounded solder stations.
» Fume absorbers.
 
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