S.NO |
Facility |
Specifications |
1 |
Dicing |
» Capability for dicing wafers up to 6 diameter and 25 mil thick.
» Capability to dice Silicon, GaAs, Ceramic substrates etc.
» Capable of dicing a minimum sheet width of 75-100 microns |
|
2 |
Die bonding |
» Both Epoxy and Eutectic die bonding under inert atmosphere |
3 |
Cleaning |
» Cleaning with Isopropyl alcohol, acetone after die bonding.
» Ultrasonic cleaning for the substrates and carriers |
4 |
Wire Bonding |
» Both Wedge and Ball bonding facility |
5 |
Bond pull and die shear test facility |
» Die-Shear test for chip as well as substrate up to 5Kg force
» Bond pull test for both Gold wire and ribbon |
6 |
Parallel gap welder |
» bonding gold ribbon up to 20 mil wide and 20 mil thick |
7 |
Resistive welding |
» Capable of welding Kovar and Stainless steel packages.
» Welding up to 8” x 8 “ size.
» Hermeticity of the order of 1 x 10 –8 atm cc/sec |
8 |
Pressurization system |
» Capable of pressurizing with fluro-carbons or helium. |
9 |
Gross leak detector |
» Bubble detection up to 10 –5 atm cc /sec |
10 |
Fine leak detector |
» Capability to detect leakage’s up to 1 x 10 –8 atm cc/sec |
11 |
Soldering |
» ESD grounded solder stations.
» Fume absorbers. |